Microwave Low Noise InP/InGaAs Heterostructure Bipolar Transistors
18 June 1989
We report the first high frequency low noise heterostructure bipolar transistor (HBT). A minimum noise figure of 0.46dB and 3.33dB was measured at 2GHz and 18GHz, respectively. The noise performance of this InP/InGaAs HBT with emitter size 3.5x3.5micron sup 2 is better than that for FETs having a 1-micron gate length.