Microwave noise performance of InP/InGaAs heterostructure bipolar transistors.
01 January 1989
We report the first low noise high frequency heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46dB and 3.33dB were measured at 2GHz and 18GHz, respectively. The noise performance of this InP/InGaAs HBT with emitter size 3.5x3. 5microns sup 2 is quieter than that for FETs having a 1micron gate length.