Migration of interstitial boron in silicon.
01 January 1986
The annealing behavior of the interstitial boron atom in crystalline silicon has been explored in DLTS studies. Previous experiments have been interpreted to indicate that the observed migration rate can be explained by a "Bourgoin-Corbett" charge state alternation mechanism when the annealing is performed under certain conditions. We have undertaken detailed experiments under pulsed conditions for which an enhanced annealing rate should be observed. The experimental results show no such enhancement, indicating that a Bourgoin-Corbett mechanism is not the correct interpetation.