Monolithic integration of InGaAs PIN photodetector with fully ion implanted InP JFET amplifier.
01 January 1988
Monolithically integrated PIN-FET amplifiers have been fabricated using ion implanted InP JFETs. The vertically integrated material structure consists of a VPE grown InGaAs photo-absorption layer and an MOCVD grown Fe doped semi-insulating layer. A Zn-diffusion was performed using Zn sub 3 P sub 2 as a solid diffusion source to complete the PIN photodiode. High performance fully implanted InP JFETS were used to form the integrated amplifier with a symmetrical design to remove the DC offset. A receiver sensitivity of -36.4 dBm was measured at 200 Mb/s NRZ for 10 sup (-9) BER.