Monolithically integrated In(0.53)Ga(0.47)As/InP direct coupled junction field-effect transistor amplifier.

Monolithic integrated In(0.53)Ga(0.47)As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and a source-follower buffer with diode level shifters. Using a micron gate length, amplifiers with an average gain of 12 dB have been fabricated.