Monolithically Integrated InGaAs/InP MSM-FET Photo-Receiver Prepared by Chemical Beam Epitaxy.

We demonstrate the first monolithic integration of a Metal- Semiconductor-Metal (MSM) photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit. The sample was grown in a single step by Chemical Beam Epitaxy, and standard processing steps for making FETs were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector and the electrical isolation layer between the photodetector and the electronic circuit. A sensitivity of -17 dBm for a bit error rate of 10 sup (-9) at 200 Mbit/s has been achieved from this preliminary circuit.