Monte Carlo simulation of the CHISEL flash memory cell

This work shows how physically-based hot carrier simulation was used to understand the importance of CHannel Initiated Secondary ELectron (CHISEL) injection in scaled MOSFETs, and how it was used to develop a powerful CHISEL-based technique for low voltage flash programming. Furthermore, it is shown how CHISEL flash addresses many of the disadvantages of CHE programming techniques, making it an ideal candidate for low-voltage, low-power Gigabit flash memories.