Multi-Component High K Gate Dielectrics for the Silicon Industry

The vary basis of the trillion-dollar semiconductor industry or "Silicon Age" is that silicon has a native oxide that is silicon dioxide. To achieve high performance (M-MIPs), high density (GBits) and low power CMOS technology, silicon dioxide has been hyper-scaled to 1.5-1.8 nm, soon approaching fundamental limit. Many high K gate dielectrics (Metal Oxides) are being investigated as an alternate to Si O sub 2. There is a loaded question facing the Si industry today. When high K, What K and What dielectric? A simple-minded answer to this complex question would depend on the technology node. If we decide to replace SiO sub 2 at t sup eq > 1.3 nm, the leading contender is doped aluminum oxide. For t sub eq 15 and aluminates may be right choice. In this talk we will discuss criteria to select alternate to SiO sub 2 and with that in mind we will benchmark dielectric and interface properties of aluminum oxide, aluminates and silicates.