Multiple Quantum Well 10 micron GaAs/Al sub x Ga sub 1-x As Infrared Detector With Improved Responsivity

We have achieved a high responsivity, R=1.9 A/W, 10microns infrared detector using intersubband absorption in GaAs/Al sub (x) Ga sub (1-x) As quantum well superlattices. The photocurrent is produced by intersubband absorption followed by efficient photoexcited tunneling. This responsivity is nearly four times higher than our previous results and has been obtained by using thicker and higher Al sub (x) Ga sub (1-x) As superlattice barriers thereby reducing the dark current and allowing the detector to be operated at higher biases.