Multistable Mode Locking of InGaAsP Semiconductor Lasers
01 January 1987
InGaAsP lasers with a proton-bombarded segment emit picosecond pulses at gigahertz rates. With an AR coated diode in an external cavity, the pulsation becomes multistable. Interlocking hysteresis loops are observed in the pulsation frequency, pulse width, and output power as functions of the bias current. An isolated state is also observed.