Multiwafer gas source MBE development for InGaAsP/InP laser production

We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell. cracking efficiency, group-III and -V uniformity, pumping system capacity and pyrometer control of growth temperature. We demonstrate the compatibility of the accurate and reproducible control of GaxIn1-xAsyP1-y alloys of GSMBE process with large-scale 1.55 mum telecom laser production. Excellent photoluminescence (PL) wavelength uniformity is obtained in 4 x 2 in configuration. Standard deviation of PL wavelength is smaller than 0.5 nm over the-entire surface of the four wafers. Extension of multiwafer growth to heterostructures lasing at shorter wavelength is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.