Multiwafer gas source MBE development for InGaAsP/InP laser production

Despite some very recent progresses on the way towards long-wavelength laser emission on GaAs substrates, opto-electronic devices used for telecommunication systems are still mainly grown on InP substrates. The Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ material system is widely used to fabricate devices emitting in the 1.2-1.6 /spl mu/m wavelength window, GSMBE technology leading to a very accurate and reproducible control of mixed group III-group V quaternary alloys and therefore on laser properties. The need for more cost effective, larger volume production of opto-electronic devices drives the demand for higher throughput GSMBE systems. In recent years, MOVPE and solid source (SS)MBE technology have been extended to large production systems, up to 4 or 5 x 4-inch for InP wafers. However, only few attempts have been done to develop multiwafer gas source systems for production. In this contribution, we demonstrate InGaAsP/InP 1.55/spl mu/m laser production on 4 x 2-inch InP wafers with high uniformity as a first step towards larger system such as multi 3- or 4-inch wafers. The interplay between various key elements required for multiwafer GSMBE such as gas cell technology, pumping system capacity and pyrometer control of growth temperature is detailed.