Nano-Scale Organic Transistors Based on Self-Assembled Monolayers

A new device strcuture is reported for the fabrication of nano-scale organic transistors. In this structure, a self-assembled monolayer (SAM) is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4'-dithiolbiphenylene. Various dielectric materials, such as SiO2, Al2O2, and a self-assembled silane monolayer, have been shown to result in high performance transistors. Finally, nano-patterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor.