Near-Ideal Lateral Scaling in Abrupt Al sub (0.48) In sub (0.52) As/In sub (0.53) - Ga sub (0.47) As Heterostructure Bipolar Transistors Prepared by Molecular Beam Epitaxy

We demonstrate near-ideal lateral scaling in abrupt junction Al sub (0.48) In sub (0.52) As/In sub (0.53) Ga sub (0.47) As heterostructure bipolar transistors. Current gain beta = 162 and 122 has been realized in transistors with emitter stripe width 50microns and 0.6microns, respectively. The excellent lateral scaling occurs because the 0.5eV emitter injection energy results in non-equilibrium vertical electron transport in the thin (700angstroms) InGaAs base.