Negatively charged polaritons in a semiconductor microcavity
15 June 2001
We study by reflection spectroscopy the cavity polaritons in a structure consisting of a single GaAs/AlAs quantum well that contains a low density (n(e)) two dimensional electron gas, and is embedded in a h-wide GaAs/Ga(1-x)Al(x)As microcavity (MC). For n(e)5x10(10) cm(-2), negatively charged MC polaritons are photoexcited, as a result of the strong coupling of the MC photon and the negatively charged {[}(e1: hh1)1S+e] exciton (X(-)). The charged polaritons have several properties that are distinct from those of neutral polaritons {[}which are formed from the neutral (e1:hh1)1S (X) and (e1:1h1)1S excitons] (a) The MC-photon-X(-)coupling strength increases as