Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors
15 September 2000
In this article, we report the results of our investigation of neutron irradiation effects on the collector-emitter offset voltage of InP/InGaAs single heterojunction bipolar transistors. We find that the offset voltage of these devices increases by more than 0.1 V for neutron doses similar to 6x10(14) cm(-2). We present an analysis of the forward and inverse Gummel plots that clearly shows that the increase in offset voltage is caused by the degradation of the base-collector junction due to the neutron-induced displacement damage in the collector. (C) 2000 American Institute of Physics. {[}S0021-8979(00)07818-X].