NEW DIRECTIONS IN THE GROWTH OF EPITAXIAL INSULATORS AND METALS ON SILICON.

By nature of their high degree of crystalline perfection, epitaxial insulators and metals on semiconductors are structurally characterizable to a considerably greater extent than are polycrystalline or amorphous materials. This offers the possibility of correlating the detailed structure of these thin epitaxial films and their interfaces with their electrical properties. We have recently found evidence for the influence of the atomic structure of the CaF sub2 /Si(111) interface on its electrical properties. We have also studied the structural and electrical properties of ultrathin epitaxial cobalt silicide layers on Si(111).