New silicon containing electron-beam resist systems.

The incorporation of silicon into resist systems has been shown to effectively instill oxygen etching resistance while maintaining lithographic utility. Such materials may be used as the imaging layer for two-level processes involving RIE pattern transfer through a planarizing layer of organic polymer. We have used the trimethylsilylmethyl appendage to effect oxygen etching resistance in both positive and negative e-beam resist systems. Compatible silyl novolac/polyolefin sulfone blends afford sensitive, high resolution resists, while the inherently positive acting trimethylsilylmethyl methacrylate can be copolymerized with chlorinated styrenes to yield negative resists capable of submicron resolution. The synthesis and radiation chemistry of these materials is discussed, in addition to a brief analysis of their lithographic properties.