Ni on InP: Metallurgical and electrical phenomena.

A new ohmic contact to n-type InP is reported. The contact is based on interfacial compound formation by solid state reaction, in a similar manner to use of silicide in silicon technology. A Ni layer evaporated on n-InP (S-doped 3 x 10(18)cm-(3)) formed an ohmic contact with specific contact resistance of 3 x 10 (-8) omega.cm(2). On p-type InP, (Zn-doped 4.5 x 10(18) cm (-3) and Cd diffused about 2 x 10(18)cm(-3)) Schottky barrier was formed. Heating at a temperature between 250 and 400C did not significantly change the ohmic contact characteristics on n-type InP. However, annealing gives rise to an increased interfacial reaction, forming Ni-InP compounds with a preferred orientation.