Noise Phenomena in Submicron Channel Length Silicon NMOS Transistors

A variety of equilibrium and transport noise phenomena in submicron channel length NMOS FETs have been studied. These include the distributed gate and substrate resistance noise, substrate current supershot noise, excess channel thermal noise and 1/f noise. Of most interest in this paper is the excess channel thermal noise. This is believed to be a result of carrier heating due to the high electric field existing in the submicron FET channel.