Non-destructive characterization of semiconductors using organic thin films.

Rectifying junctions prepared by vacuum deposition of 3,4,9,10- perylenetetracarboxylic dianhydride (PTCDA) and related compounds on both p- and n-type inorganic semiconducting wafers are used for their non-destructive evaluation. By evaporation of metal contact pads onto the organic layer, we can probe many of the fundamental bulk and surface properties of the semiconductor.