Non-equilibrium effects in the channeling of energetic particles through ultra-thin Si/Ge/Si heterostructures: A Monte-Carlo Study.
01 January 1988
Non-equilibrium phenomena in the channeling of 1.8 MeV He sup + in 2 - 6 ML thick pseudomorphic films of Ge on Si(100) capped with 148 ML of crystalline Si are investigated using Monte- Carlo techniques. The large asymmetry in the channeling angular scans is related to the strain in the ultra-thin film and can be used as a sensitive measure of that strain. The two lattice parameters of interest, at the Si/Ge interface and of the strained Ge film, are extracted by comparing experimental results with simulations.