Non-equilibrium electron transport in semiconductors.

We explore the physics of nonequilibrium electron transport in semiconductors with the aim of using this knowledge to develop new, ultrafast electronic and optoelectronic devices. In this paper a theory describing hot electron transport in n- and p-type semiconductors is discussed and operation of an n-type unipolar transistor with a 100angstrom wide base and current gain, beta greater than 15 is demonstrated.