Nonlinear Screening and the Coulomb Gap in a Doped, Crystalline Semiconductor
16 March 1987
We have observed evidence for the correlation-induced Coulomb gap in the density of hole states (DOS) in a lightly-doped, compensated (K~0.5) GaAs. The screening was studied in a sample with a Metal-Insulator-Semiconductor geometry, designed for this experiment and fabricated using Molecular-Beam Eptiaxy.