Normal displacements on a reconstructed silicon (111) surface: An X-ray standing wave study.
01 January 1986
The average relaxation of the top layers of a germanium atom tagged Si(111) surface has been measured using x-ray interferometric and fluorescence methods. The results indicate a slight outward displacement (~2%) of the outer layers on a (5x5) reconstructed surface. We consider these results to be in disagreement with those of a recent synchrotron based experiment where the inelastic Auger electron channel was used.