Novel Dielectric/Si Planar Structures Formed by Ion Beam Synthesis

Recent experiments related to the SIMOX (SOI) technology have shown that buried Si02 layers,with abrupt interfaces, may be formed by ion beam synthesis (IBS). Processing involves (i) implantation followed by (ii) high temperature annealing, which leads to chemical segregation of the implanted species in both the O/Si and N/Si systems.