Novel Metallization Technique for High Density SRAM

Development of new SRAM cell technologies makes it possible to further reduce the cell size. Already cell width has been reported to scale down to below 2 microns. This poses a severe constraint on the width of the metal lines constituting Bit and Bit-not interconnects. As shown in Figure 1, even assuming the contact window size of only 0.5 microns, in order to obtain a minimal lithographically resolvable spacing S of 0.4 microns between the lines, one is limited by the maximum aluminum line width L of 0.6 microns.