Novel technology of III-V die-bonded SOI photonic integrated circuits

In the frame of the H2020 PICTURE project, we designed and developed densely integrated photonic devices and transceiver (TRx) circuits for high bit-rate telecom and datacom applications. We implemented a process with four different InP-based dies bonded on SOI wafers. With one sole back-end processing run, we achieved the fabrication of multiple components of the complex TRx circuits, and many building block devices, such as III-V/Si SOAs & Fabry-Perot lasers, photodiodes or fast tunable capacitive DFB lasers. First testing of these devices shows promising results. 13dBm-saturation power SOAs and less than 2ns-tuning time capacitive DFB lasers were fabricated and demonstrated.