Numerical simulation of the horizontal Bridgman growth of semiconductor crystals III.

Detailed results are presented for the thermo-mechanical response of horizontal boat melts, as used in the growth of high-quality GaAs and GaAb crystals. A variety of thermal flux boundary conditions for the crucible is explored and it is shown that growth conditions respond more sensitively to thermal control of the liquid than the solid phase. A set of conditions is found which represents a compromise between interface shape, convective stability and uniformity of dopant distribution.