Observation of Intrinsic Bistability in Resonant-Tunneling Structures - Reply

The data presented in Fig. 1 of the preceding Comment[1] display extrinsic bistability; the statement that "The hysteresis occurs because of the oscillations" [1] is not substantiated and is, in our opinion, erroneous. Indeed, although Sollner does not provide any information about his sample, it is quite clear that the current peak occurs at about 0.2 or 0.3 V across the double-barrier region of the device.[2] Therefore, the extra 0.7 or 0.8 V of the total bias drops across a series resistance (made up of the resistance of the electrodes, the substrate, the contacts, and the external wires). From the data of Fig. 1 in Ref. 1 we estimate the series resistance to be ~ 100 OMEGA [(0.7 V)/(7 mA)].