Observations on Intensity Oscillations in Reflection High-Energy Electron Diffraction During Chemical Beam Epitaxy.

We report the observation of reflection high-energy electron diffraction (RHEED) intensity oscillations during the growth of GaAs using triethylgallium in chemical beam epitaxy (CBE). The oscillation period corresponds exactly to the time required for the growth of one monolayer. RHEED oscillation studies also provide an unambiguous direct proof of the absence of flux transients due to switches of gas-flows, abrupt and complete initiation and termination of growth with submonolayer resolution, and that CBE is capable of thickness control with submonolayer precision when coupled with the use of in-situ RHEED intensity monitoring technique.