Ohmic, Superconducting, Shallow AuGe/Nb Contacts to GaAs
01 January 1986
Hydrostatic pressure (up to 16 kbar) has been used to investigate the transport properties of GaInAs-AlInAs heterojunctions in the range 0-18 tesia and 4.2 - 300 K.
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01 January 1986
Hydrostatic pressure (up to 16 kbar) has been used to investigate the transport properties of GaInAs-AlInAs heterojunctions in the range 0-18 tesia and 4.2 - 300 K.