OMVPE Growth of II-VI Superlattices
12 July 1987
The modification of the optical, electrical and mechanical properties of semiconductors through the growth of composite structures, or "bandgap engineering," has shown tremendous promise in the III-V semiconductors. Growth techniques such as Molecular Beam Epitaxy (MBE) and Organometallic Vapor Phase Epitaxy (OMVPE) have been used extensively and successfully. While MBE has had some success with II-VI semiconductor superlattices, such as the HgTe-CdTe, CdTe-ZnTe, and ZnS-ZnSe systems, there have been few reports of successful superlattice growth by OMVPE.