Operation of the Si/CoSi(2)/Si heterostructure transistor.

A two-current-path model is presented to describe the operation of the Si/CoSi(2)/Si epitaxial, heterostructure transistor. The model gives a good account of the device behavior and allows us to conclude that it works by activated charge control, like a bipolar transistor. The analysis further suggests that with the fine base dimensions made possible by the single-crystal, vertical structure one can foresee devices with beta's of a 100 or more, at the same time maintaining a transconductance close to the optimal value 0.04 mhos/mA characteristic of a charge injection device.