Optical absorption tail in InP:Mn from surface photovoltage.

The steady-state surface photovoltage technique was used to determine the optical absorption tail of InP:Mn, by extrapolation from the above-band gap absorption spectrum. Reaborbed recombination radiation is shown to have no effect on this procedure although it does raise the effective minority carrier diffusion length. The tail absorption coefficient of InP:Mn increases with hole density in the range of 4.1x10(14)cm to 5.3 x 10(16)cm(3) range, the absorption coefficient appears to rise also with the density of dislocations.