Optical Characterization of Carbon Doped Ga sub (0.47) In sub (0.53) As
01 December 1999
The optical properties of intentionally carbon doped Ga sub (1-x) In sub x As lattice to InP grown by metal-organic molecular beam epitaxy were studied. Standard photoluminescence and photoluminescence excitation measurements were carried out on samples with different doping concentrations and a carbon related acceptor level was found 42 meV above the valence band edge.