Optical investigation of modulation-doped In(0.53)Ga(0.47)As/In (0.48)Al(0.52)As multiple quantum well heterostructures.

We present the results of the first optical studies of modulation- doped In(0.47)Ga(0.53)As/In(0.48)Al(0.52)As multiple quantum well heterostructures. By a combination of luminescence and absorption measurements, we have distinguished between intrinsic and extrinsic luminescence processes. We show that the intrinsic luminescence dominates above 70K and results from recombination of 2D electron plasma with photoexcited holes.