Optical Properties of III-V Strained Layer Quantum Wells.

01 January 1989

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This paper reviews recent experimental and theoretical studies of InGaAs strained layer quantum wells and superlattices grown on InP and GaAs substrates. The optical properties of a set of periodically structured samples covering a wide range of biaxially compressive and tensile strain are compared with those of lattice-matched In sub (0.53) Ga sub (0.47) As/InP structures. The dramatic variations observed in the optical behavior of the samples under strain are quantitatively analysed in terms of an effective mass model and bulk phenomenological deformation potential theory.