Optical Properties of Multiple Layers of Self-Organized InAs Quantum Dots Emitting at 1.3microns

We report the growth and characterization of multiple layers of self-organized InAs quantum dots emitting near 1.3microns. We have successfully fabricated closely-spaced ( 20 nm) quantum dot layers with a density of ~3 10 sup 10 cm sup (-2) per layer. We analyze their optical properties as a function of the number of dot layers and investigate how the vertical stack modifies the dot size distribution. These results highlight the challenges that lie ahead in the growth of closely-spaced, high quality multiple quantum dot layers emitting at 1.3microns.