Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy.

Single quantum wells of GaInAs and GaInAsP isolated by 150angstroms thick InP barriers have been grown by gas source molecular beam epitaxy. The quantum wells ranged in the thickness from 5 to 30angstroms. Photoluminescence and transmission electron microscopy were used to characterize them. Intense luminescence was observed at low temperatures even from the thinnest of the wells. The spectral shifts due to the quantum size effect were 450 meV for the quaternary 5angstroms well and 534 meV for the ternary 5angstroms well. The latter constitutes approximately 85% of the total bandgap discontinuity. Emission linewidths were less than expected for one monolayer of interface roughness.