Optimization of Tunneling-Injection InAs/InP (100) Quantum Dashes Lasers for High-Speed Optoelectronic Devices

We investigate in detail the influence of the tunneling-injection design on the device performances of InAs/InP QDashes-based broad-area lasers. Using optimum design, high-performances single mode buried ridge stripe Fabry-Perrot lasers are reported (external efficiency of ~0.17 W/A per facet and threshold current of ~16 mA for as-cleaved 600 mum-long cavity). A relaxation frequency of 8.5 GHz is reported, indicating the good potential of such design for 10 Gb/s direct modulation, and the actual limitations of small-signal modulation bandwidth are discussed.