Optoelectronic properties of pseudomorphic Si sub x Ge sub (1-x) /Ge heterostructures on (001) Ge.

The optical and electronic properties of pseudomorphic Si sub x Ge sub (1-x) /Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.