Organic-on-inorganic contact barrier heights: A survey of materials.

Organic-on-inorganic semiconductor contact barrier energies have been determined using capacitance and current-voltage characteristics for several inorganic semiconductor substrate materials. The barrier energies vary from 0.45 eV for n-type InP and related compounds under some conditions of surface preparation, to 0.85 eV for n and p type GaAs. These barriers are generally higher than metal Schottky barriers made on the same materials, and permit non-destructive analysis and evaluation of the inorganic semiconductor.