Organometallic Vapor Phase Epitaxy of II-VI Compounds

The potential applications of the II-VI semiconductors and their alloys have recenttly received renewed interest as a result of recen advances in growth technology such as Molecular Beam Epitaxy (MBE) and Organometallic Vapor Phase Epitaxy (OMVPE). The relatively low temperatures associated with these processes as well as improved source materials for these techniques have resulted in the successful fabrication of doped layers, superlattices, quantum well structures, etc. Furthermore, newly proposed structures such as MIS devices and resonant tunneling structures seek to successfully integrate II- VI and III-V technologies. However, despite these developments, many questions remain regarding the technology of growing both binary II-VI compounds and their alloys.