Origin of Excess Capacitance at Epitaxial Silicide Contacts

The physical origin of the excess capacitance at single crystal, epitaxial type-A and type-B NiSi sub 2 Schottky contacts has been identified. To our suprise, and in stark contrast to previous interpretations, we show that the excess capacitance occurring in forward biased diodes is] caused by minority carriers that are injected into the bulk semiconductor.