Origin of the Excess capacitance at epitaxial silicide contacts.

We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e. intimate Schottky contacts. In contrast to previous interpretations, the capacitance in excess to the space charge capacitance is not caused by interface states but is instead a diffusion capacitance of minority carriers injected into the bulk semiconductor. Minority carrier injection depends sensitively on the properties of the ohmic back-contact.