Out-diffusion of S from InP:S.
01 January 1984
Liquid encapsulated Czochralski grown InP:S samples annealed for short times of 30 minutes in various ambients at 550C show diffusion fronts suggesting an extremely rapid out-diffusion of S. In phosphorus ambient, the effective diffusion coefficient is inversely proportional to the phosphorus vapor pressure. The kinetics of surface reactions appear to play a significant role on the rates of diffusion.