Output impedance of double heterojunction bipolar transistor as detectors for wireless terahertz communication

As the demand for data consumption increasingly grows, a communication based on terahertz frequencies carrier becomes an effective way to reach very broadband transmissions at data rates up to hundreds of gigahertz. We report an experimental study of InP-based double heterojunction bipolar transistor used as detector for high data-rate terahertz wireless communication. Measurement of the responsivity at THz frequency and output impedance are presented. We show that a significant reduction of the output impedance can be obtained by applying a sufficient base-emitter bias thus improving substantially the impedance matching for 50 Using such a configuration, realtime uncompressed high-definition video signal is successfully transmitted at 1.5 Gbps.