Overview of III-V Device Technologies for Electronic Applications.

The electronic and optical properties of III-V materials can be engineered by the use of materials growth and fabrication techniques with many degrees of freedom in the design, such as the material bandgap, doping and thickness. AT&T has a strong commitment to electronics and photonics based on these foundations, to maintain its leadership in communications and information technology. This chapter reviews the use of III-V compound semiconductors for ultra-high speed electronics, in particular the Heterostructure Field-Effect Transistor and the Heterojunction Bipolar Transistor, based on GaAs and InP technology.