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    Oxygen RIE Resistant Deep UV Positive Resists: Poly (trimethylsilylmethy 1 Methacrylate) and Poly (trimethylsilylmethy 1 Methacrylate- Co-3-oximo-2-butanone Methacrylate).

Oxygen RIE resistant deep UV positive resists: Poly (trimethylsilylmethy 1 methacrylate) and poly (trimethylsilylmethy 1 methacrylate- co-3-oximo-2-butanone methacrylate).

01 January 1985

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The polymer, P(SiMA), derived from trimethylsilylmethyl methacrylate and the copolymer, P(Si-OM), with 3-oximino-2-butanone methacrylate are resistant to oxygen reactive ion etching in the pressure range 20 to 100micron and thus are effective patterning masks for planarizing layers such as hard baked HPR-204.